Converter with glass layers

ABSTRACT

A wavelength converting layer may have a glass or a silicon porous support structure. The wavelength converting layer may also have a cured portion of wavelength converting particles and a binder filling the porous glass or silicon support structure.

CROSS REFERENCE TO RELATED APPLICATION(S)

This application claims the benefit of U.S. Patent Application No.62/608,326 filed Dec. 20, 2017 and European Patent Application No.18154855.3 filed Feb. 20, 2018 which are incorporated by reference as iffully set forth.

BACKGROUND

Semiconductor light-emitting devices including light emitting diodes(LEDs), resonant cavity light emitting diodes (RCLEDs), vertical-cavitysurface-emitting laser (VCSEL), edge emitting lasers, or the like aredesirable due to efficiency, performance, light temperature, brightness,or the like. Materials of interest in the production or manufacture oflight emitting devices operating across the visible spectrum may includeGroup III-V semiconductors, binary, ternary, and quaternary alloys ofgallium, aluminum, indium, nitrogen, III-nitride materials, or the like.

LEDs may be arranged with wavelength converting materials such asphosphor particles, quantum dots, dyes, or the like. AN LED combinedwith one or more wavelength converting materials may be produced tocreate white light, monochromatic light of other colors, or the like.The light emitted by the LED may be converted by the wavelengthconverting material. Unconverted light may be part of a resultingspectrum of light.

An LED may be coated with phosphor that is dispensed, screen printed,sprayed, molded, electrophoretically deposited, laminated, or the like.Although it may be complex and expensive, for high temperatureapplications, a phosphor contained in glass, or a pre-formed sinteredceramic phosphor may be attached to an LED. In addition, it can bedifficult to form or cut thin pre-formed ceramic layers.

SUMMARY

A wavelength converting layer may have a glass or a silicon poroussupport structure. The wavelength converting layer may also have a curedportion of wavelength converting particles and a binder filling theporous glass or silicon support structure.

BRIEF DESCRIPTION OF THE DRAWINGS

A more detailed understanding may be had from the following description,given by way of example in conjunction with the accompanying drawings,wherein like reference numerals in the figures indicate like elements,and wherein:

FIG. 1A illustrates a wavelength converting layer with a phosphorcomprising a glass mesh;

FIG. 1B illustrates a process to form a wavelength converting layercomprising a glass mesh;

FIG. 1C illustrates a process to attach a glass silicone substratewavelength converting layer to one or more lighting devices;

FIG. 1D illustrates a process to attach a laminated glass siliconesubstrate wavelength converting layer to one or more lighting devices;

FIG. 1E illustrates a process to produce phosphor films with a porouscomponent;

FIG. 1F illustrates manufacturing phosphor films with a porouscomponent;

FIG. 2A is a diagram showing an light emitting diode (LED) device;

FIG. 2B is a diagram showing multiple LED devices;

FIG. 3 is a top view of an electronics board for an integrated LEDsystem according ;

FIG. 4A is a top view of the electronics board with an LED arrayattached to the substrate at the LED device attach region;

FIG. 4B is a diagram of a two channel integrated LED lighting systemwith electronic components mounted on two surfaces of a circuit board;and

FIG. 5 is a diagram of an example application system.

DETAILED DESCRIPTION

Examples of different light illumination systems and/or light emittingdiode implementations will be described more fully hereinafter withreference to the accompanying drawings. These examples are not mutuallyexclusive, and features found in one example may be combined withfeatures found in one or more other examples to achieve additionalimplementations. Accordingly, it will be understood that the examplesshown in the accompanying drawings are provided for illustrativepurposes only and they are not intended to limit the disclosure in anyway. Like numbers refer to like elements throughout.

It will be understood that, although the terms first, second, third,etc. may be used herein to describe various elements, these elementsshould not be limited by these terms. These terms may be used todistinguish one element from another. For example, a first element maybe termed a second element and a second element may be termed a firstelement without departing from the scope of the present invention. Asused herein, the term “and/or” may include any and all combinations ofone or more of the associated listed items.

It will be understood that when an element such as a layer, region, orsubstrate is referred to as being “on” or extending “onto” anotherelement, it may be directly on or extend directly onto the other elementor intervening elements may also be present. In contrast, when anelement is referred to as being “directly on” or extending “directlyonto” another element, there may be no intervening elements present. Itwill also be understood that when an element is referred to as being“connected” or “coupled” to another element, it may be directlyconnected or coupled to the other element and/or connected or coupled tothe other element via one or more intervening elements. In contrast,when an element is referred to as being “directly connected” or“directly coupled” to another element, there are no intervening elementspresent between the element and the other element. It will be understoodthat these terms are intended to encompass different orientations of theelement in addition to any orientation depicted in the figures.

Relative terms such as “below,” “above,” “upper,”, “lower,” “horizontal”or “vertical” may be used herein to describe a relationship of oneelement, layer, or region to another element, layer, or region asillustrated in the figures. It will be understood that these terms areintended to encompass different orientations of the device in additionto the orientation depicted in the figures.

Semiconductor light emitting devices or optical power emitting devices,such as devices that emit ultraviolet (UV) or infrared (IR) opticalpower, are among the most efficient light sources currently available.These devices may include light emitting diodes, resonant cavity lightemitting diodes, vertical cavity laser diodes, edge emitting lasers, orthe like (hereinafter referred to as “LEDs”). Due to their compact sizeand lower power requirements, for example, LEDs may be attractivecandidates for many different applications. For example, they may beused as light sources (e.g., flash lights and camera flashes) forhand-held battery-powered devices, such as cameras and cell phones. Theymay also be used, for example, for automotive lighting, heads up display(HUD) lighting, horticultural lighting, street lighting, torch forvideo, general illumination (e.g., home, shop, office and studiolighting, theater/stage lighting and architectural lighting), augmentedreality (AR) lighting, virtual reality (VR) lighting, as back lights fordisplays, and IR spectroscopy. A single LED may provide light that isless bright than an incandescent light source, and, therefore,multi-junction devices or arrays of LEDs (such as monolithic LED arrays,micro LED arrays, etc.) may be used for applications where morebrightness is desired or required.

In the example given herein a wavelength converting layer may include aglass (e.g., quartz) or silicon porous support material. The poroussupport structure may be stacked mesh layers. Certain arrangements mayinclude wavelength converting particles that may be inorganic phosphorparticles, have a silicone binder, have silicone with fillers as abinder to increase the refractive index, or the like. A wavelengthconverting layer may be attached to a light source, light emitting diode(LED), or the like. In the examples given herein of light devices mayinclude a blue-emitting light emitting diode (LED) combined with ayellow-emitting phosphor, a blue-emitting LED combined with green- andred-emitting phosphor particles, a ultraviolet (UV)-emitting LEDcombined with blue- and yellow-emitting phosphor particles, and aUV-emitting LED combined with blue-, green-, a red-emitting phosphorparticles, or the like or a combination thereof.

A stacked mesh layer may be one in which the support material (e.g.,glass, silicon, quartz) includes woven fibers or strings that extendover multiple cavities created by the respective woven fibbers. As shownin FIG. 1A, the substrates 1102 are woven such that they extend the spanof multiple cavities. Further, the substrates 1102 are stacked in aformation that may allow one or more cavities to span across multiplelayers of the mesh substrate. A woven material (e.g., glass, silicon,quartz) may be woven such that one end of a piece of the material thatis used to create the mesh extends across 100% or substantially 100% ofof a dimension of the mesh. As an example, a first woven supportmaterial may have a first end at a first edge of the stacked mesh and asecond edge at a second edge of the stacked mesh such that the first endis on an opposite end of the stacked mesh than the second end.

Phosphor particles utilized in a wavelength converting layer may bedispensed, screen printed, sprayed, molded, electrophoreticallydeposited, laminated, or the like. In certain applications, processingof phosphor in glass or pre-formed ceramic phosphor may be costly or bedifficult to form or cut thin pre-formed ceramic layers.

FIG. 1A illustrates a wavelength converting layer 1100 with a phosphorcomprising a glass mesh. A wavelength converting layer 1100 may beformed from a combination of quartz or glass substrates 1102, phosphoror other light wavelength converting particles 1104, and a binder 1106.A glass substrate may comprise a thin quartz mesh filled with phosphorparticles, silicone binders, quartz or glass fillers having a refractiveindex closely matching the quartz mesh, or the like.

The substrate 1102 may be formed as a mesh, a sheet, utilizing orderedor random fibers arranged in two or three-dimensional patterns, or thelike. Multiple homogenous or heterogeneous layers formed from variousmaterials or ordered arrangements can be used. For example, an outermostlayer may be a continuous glass or quartz sheet. Mesh spacing, effectivepore size, pore fluid connectivity, or the like may be arranged to allowfor atmospheric, low, or high-pressure emplacement of phosphor particlesand binder material throughout the substrate 1102.

Light wavelength converting particles such as phosphor particles may beluminescent materials that can absorb excitation or radiation energy andemit absorbed energy as radiation of a different wavelength than theexcitation wavelength. Phosphor particles for example, may be highlylight absorbent and have quantum efficiencies substantially at 100% suchthat most photons provided as excitation energy are reemitted by thephosphor. If a light emitting device can emit light directly into anefficient, absorbent phosphor, the phosphor may efficiently extract andwavelength convert the emitted light.

Light wavelength converting particles may include organic p, quantumdots, organic semiconductors, II-VI or III-V semiconductors, II-VI orIII-V semiconductor quantum dots or nanocrystals, dyes, polymers, orluminesce materials, or the like. For example, a white-emitting LED mayresult from pairing a blue-emitting LED with a wavelength convertingmaterial such as Y3Al5O12:Ce3+, that absorbs some of the blue light andemits yellow light. Other examples of phosphor particles that may beused include aluminum garnet phosphor particles with:(Lu1-x-y-a-bYxGdy)3(Al1-zGaz)5O12:CeaPrb   Formula (1)wherein 0<x<1, 0<y≤1, 0<z0.1, 0<a≤0.2 and 0<b≤0.1 and Lu3Al5O12:Ce3+ andY3Al5O12:Ce3+ which emit light in the yellow-green range. Anotherexample may be (Sr1-x-yBaxCay)2-zSi5-aAlaN8-aOa:Euz 2+ wherein 0≤a<5,0<x≤1, 0≤y≤1, and 0<z≤1, such as Sr2Si5N8:Eu2+, which emit light in thered range.

Other suitable green, yellow, and red emitting phosphors may include(Sr1-a bCabBac)SixNyOz:Eua 2+ (a=0.002-0.2, b=0.0-0.25, c=0.0-0.25,x=1.5-2.5, y=1.5-2.5, z=1.5-2.5) including, for example, SrSi2N2O2:Eu2+;(Sr1-u-v-xMguCavBax)(Ga2-y-zAlyInzS4):Eu2+ including, for example,SrGa2S4:Eu2+; Sr1-xBaxSiO4:Eu2+; or (Ca1-xSrx)S:Eu2+ wherein 0<x<1including, for example, CaS:Eu2+ and SrS:Eu2+.

Examples of suitable yellow/green emitting phosphors may includeLu3-x-yMyAl5-zAzO12:Cex where M=Y, Gd, Tb, Pr, Sm, Dy; A=Ga, Sc and(0<x≤0.2); Ca3-x-yMySc2-zAzSi3O12:Cex where M=Y, Lu; A=Mg, Ga and(0<x≤0.2); Ba2-x-yMySiO4:Eux where M=Sr, Ca, Mg and (0<x≤0.2);Ba2-x-y-zMyKzSi1-zPzO4Eux where M=Sr, Ca, Mg and (0<x≤0.2);Sr1-x-yMyAl2-zSizO4-zNz:Euxwhere M=Ba, Ca, Mg and (0<x≤0.2);M1-xSi2O2N2:Eux where M=Sr, Ba, Ca, Mg and (0<x≤0.2); M3-xSi6O9N4:Euxwhere M=Sr, Ba, Ca, Mg and (0<x≤0.2); M3-xSi6O12N2:Eux where M=Sr, Ba,Ca, Mg and (0<x≤0.2); Sr1-x-yMyGa2-zAlzS4:Eux where M=Ba, Ca, Mg and(0<x≤0.2); Ca1-x-y-zMzS:CexAy where M=Ba, Sr, Mg; A=K, Na, Li and(0<x≤0.2); Sr1-x-zMzAl1+ySi4.2-yN7-yO0.4+y:Eux where M=Ba, Ca, Mg and(0<x≤0.2); Ca1-x-y-zMySc2O4:CexAz where M=Ba, Sr, Mg; A=K, Na, Li and(0<x≤0.2); Mx-zSi6-y-2xAly+2xOyN8-y:Euz where M=Ca, Sr, Mg and(0<x≤0.2); and Ca8-x-yMyMgSiO4C12:Eux where M=Sr, Ba and (0<x≤0.2).

Examples of suitable red emitting phosphor particles includeCa1-x-zMzS:Eux where M=Ba, Sr, Mg, Mn and (0<x≤0.2);Ca1-x-yMySi1-zAl1+zN3-zOz:Eux where M=Sr, Mg, Ce, Mn and (0<x≤0.2);Mg4Ge1-xO5F:Mnx where (0<x≤0.2); M2-xSi5-yAlyN8-yOy:Eux where M=Ba, Sr,Ca, Mg, Mn and (0<x≤0.2); Sr1-x-yMySi4-zAl1+zN7-zOz:Eux where M=Ba, Ca,Mg, Mn and (0<x≤0.2); and Ca1-x-yMySiN2:Eux where M=Ba, Sr, Mg, Mn and(0<x≤0.2).

In certain arrangements, a phosphor may include portions with inertparticles rather than phosphor, with phosphor crystals withoutactivating dopant, or the like such that those portions do not absorband emit light. For example, SiNx may be included as inert particles. Anactivating dopant in the ceramic phosphor may also be graded, forexample such that the phosphor particles closest to a surface have thehighest dopant concentration. As the distance from the surfaceincreases, the dopant concentration in the phosphor may decrease. Thedopant profile may take any shape such as linear, step-graded, a powerlaw profile, or the like and may include multiple, varying, or mixeddopant concentration.

In certain arrangements, portions of the substrate may be substantiallywithout a phosphor or a dopant. The phosphor thickness and loading ofactivating dopant may be tailored to produce a desired emissionwavelength(s) or spectrum. A phosphor may include multiple types ofphosphor particles, each emitting the same or different wavelengths oflight. Multiple types of phosphor particles may be mixed or formed intoa single homogenous phosphor. Multiple types of phosphor particles mayalso be formed in separate layers that make up a stack or plurality ofphosphor layers within the substrate 1102. Multiple substrate layers mayalso be bonded together to form a multilayer stack. Wavelengthconverting layer 1100 may also be used in conjunction with conventionalphosphor layers, such as conformal phosphor layers or phosphor particlesdisposed in epoxy.

The wavelength converting layer 1100 may include various types of LEDs.Unconverted light emitted by the LED may be part of the resultingspectrum or wavelength(s) of extracted light. LEDs may be combined.Combinations may include a blue-emitting LED combined with ayellow-emitting wavelength converting particles, a blue-emitting LEDcombined with green- and red-emitting wavelength converting particles, aUV-emitting LED combined with blue- and yellow-emitting wavelengthconverting particles, a UV-emitting LED combined with blue-, green-, andred-emitting wavelength converting particles, or the like. Wavelengthconverting particles emitting other colors of light may be utilized toresult in a desired extracted spectrum or wavelength(s) of light from astructure.

Binders may be used for holding together or attaching wavelengthconverting particles 1104 to a substrate 1102. Binders may be organic,inorganic, organic and inorganic, or the like. Organic binders may beacrylate, nitrocellulose, or the like. An organic/inorganic binder maybe silicone such methyl or phenyl silicone, fluorosilicones, a highrefractive index silicones, or the like to meet any pre-determinecriteria. Inorganic binders may be a sol-gel, a sol-gel of TEOS, asol-gel or MTMS, liquid glass, sodium silicate, potassium silicate,water glass, a material with a low viscosity that is able to saturateporous substrates, or the like.

Binders may also include fillers to adjust physical or opticalproperties. Fillers may include inorganic nanoparticles, silica, glassparticles, fibers, materials that increase refractive index, or thelike. Fillers may also include materials that increase opticalperformance, materials that promote scattering, materials that increasethermal performance, materials that increase brightness, or the like.

The wavelength converting layer 1100 of FIG. 1A may be substantiallysquare, rectangular, polygonal, hexagonal, circular, or any othersuitable or suitable shape. In certain arrangements, wavelengthconverting layer 1100 may be singulated before positioning near an LED.In certain arrangements, wavelength converting layer 1100 may besingulated after attachment to an LED. Wavelength converting layer 1100may be directly attached to an LED, disposed in proximity to an LED, orthe like. Wavelength converting layer 1100 may be separated from an LEDby an inorganic layer, a polymer sheet, a thick adhesive layer, a smallair gap, or any other suitable structure. The spacing between LED andthe wavelength converting layer 1100 may be less than 500 μm, less thana nanometer, on the order of millimeters, or the like.

Multiple types of wavelength converting structures may be used in adevice. A silicon and glass mesh wavelength converting layer may becombined with a molded polymer and quantum dot containing a wavelengthconverting layer. In addition, a filter or metallic reflector may beformed over at least a part of wavelength converting layer 1100. Afilter may recycle parts of the spectrum or wavelength(s) emitted by thewavelength converting layers that are absorbed by other filter layers ordifferentially reflective structures. Filters may be a stack ofdielectric layers that form a distributed Bragg reflector. In wavelengthconverting layer 1100, metallic reflectors may be used to recycle lightthat escapes through a sidewall.

In a certain arrangement, a device with two wavelength convertingmaterials may emit light having a blue peak wavelength, a green peakwavelength, and a red peak wavelength. This arrangement may allowreflected light having a peak wavelength between the green and blue peakwavelengths, between the green and red peak wavelengths, or both.

FIG. 1B illustrates a process 1200 to form a wavelength converting layercomprising a glass mesh. It will be understood that although thedisclosure herein may recite a glass mesh as an example, the mesh may bean applicable material such as glass, quartz, silicone, or the like. In1200, a glass or silicon glass mesh may be provided (1202). The glassmesh may be built from multiple layers of glass threads or fibers thatare arranged in a two or three-dimensional pattern and heated untilpartially, substantially, or the like fused. Sufficient spacing betweenglass fibers may be arranged so that a continuous open pore space existsin the three-dimensional structure. The glass mesh may be filled with aphosphor or binder slurry (1204). The phosphor or binder slurry maycomprise inorganic or other fillers. Filling can be completed by dippinginto a slurry at normal atmospheric pressure, by high pressureinjections, by low pressure enabled fill, or the like. The phosphor orbinder slurry may also include silicone that is heated or UV irradiateduntil partially, substantially, or the like cured. A binder slurry mayalso be spray coated over the mesh to create a thin or densely packedphosphor layers on both sides of a mesh.

A combined glass mesh substrate and phosphor or binder may be singulatedand attached or positioned adjacent to an LED (1206). At or after curing(1208) contact positioning, adhesive attachment, structural positioning,or the like may be utilized to fix the combined glass mesh substrate andphosphor or binder to an LED. For attachment to multiple LEDS (1210), ator after curing (1212) may include contact positioning, adhesiveattachment, structural positioning, or the like to fix the combinedglass mesh substrate and phosphor or binder with respect to an LED. Inaddition, a structure may be singulated and separated prior topackaging.

FIG. 10 illustrates a process 1300 to attach a glass silicone substratewavelength converting layer to one or more lighting devices. A lightingdevice may be a LED or any other device capable at producing light. Aglass or silicon glass mesh 1302 may be provided. An adhesive 1304 isthen applied. An adhesive may be applied by spin coating, spin coatingusing the B-staged silicone, or the like to reduce adhesive or glueoverflow or any other process, as desired. Glass or silicon mesh 1302may then be attached, such as with the adhesive layer, to one or moresingulated LEDs 1306. Mesh 1302 is singulated 1308. A combination ofmesh 1302 and one or more singulated LEDs 1306 may also be inverted andreadied for packaging.

FIG. 1D illustrates a process 1400 to attach a laminated glass siliconesubstrate wavelength converting layer to one or more lighting devices. Alighting device may be a LED or any other device capable at producinglight. A glass or silicon glass mesh 1411 may be provided. A phosphor orbinder 1413 may be pressure or heat laminated to glass or silicon glassmesh 1411. Phosphor or binder 1413 may provide structural support. Thecombined mesh 1402 and phosphor or binder 1413 may form a wavelengthconverting layer that is then attached, such as with an adhesive layer,to one or more LEDs 1406. The wavelength converting layer may besingulated 1408. A combination of the wavelength converting layer andone or more LEDs 1406 may also be inverted and readied for packaging.

FIG. 1E illustrates a process 1500 to produce phosphor films with aporous component. A first converter film with first color point may beproduced (1502) and a second converter film with second color point maybe produced (1504). The first color point and the second color point maybe such that, when the first converter film and the second converterfilm is laminated onto a porous component, the color point of theresulting wavelength converting layer is a pre-determined color point.The first and second phosphor films may be laminated onto a porouscomponent, resulting in a wavelength converting layer with thepredetermined color point (1506).

FIG. 1F illustrates a process 1600 for manufacturing wavelengthconverting film 16-4 with a porous component. A first phosphor film withfirst color point and a second phosphor film with second color point maybe laminated onto a porous component for a predetermined color point at1602 resulting in wavelength converting layer 1604. The wavelengthconverting layer 1604 may correspond to the wavelength converting layer206 of FIG. 2A, as further discussed herein.

FIG. 2A is a diagram of an LED device 200 in an example embodiment. TheLED device 200 may include a substrate 202, an active layer 204, awavelength converting layer 206, and primary optic 208. In otherembodiments, an LED device may not include a wavelength converting layerand/or primary optics.

As shown in FIG. 2A, the active layer 204 may be adjacent to thesubstrate 202 and emits light when excited. Suitable materials used toform the substrate 202 and the active layer 204 include sapphire, SiC,GaN, Silicone and may more specifically be formed from a III-Vsemiconductors including, but not limited to, AlN, AlP, AlAs, AlSb, GaN,GaP, GaAs, GaSb, InN, InP, InAs, InSb, II-VI semiconductors including,but not limited to, ZnS, ZnSe, CdSe, CdTe, group IV semiconductorsincluding, but not limited to Ge, Si, SiC, and mixtures or alloysthereof.

The wavelength converting layer 206 may be remote from, proximal to, ordirectly above active layer 204. The active layer 204 emits light intothe wavelength converting layer 206. The wavelength converting layer 206acts to further modify wavelength of the emitted light by the activelayer 204. LED devices that include a wavelength converting layer areoften referred to as phosphor converted LEDs (POLED). The wavelengthconverting layer 206 may include any luminescent material, such as, forexample, phosphor particles in a transparent or translucent binder ormatrix, or a ceramic phosphor element, which absorbs light of onewavelength and emits light of a different wavelength. The wavelengthconverting layer 206 may have a pre-determined color point such that afirst converter film with a first converter point and a second converterfilm with a second converter point are laminated onto a porouscomponent, as disclosed herein, to manufacturer the wavelengthconverting layer 206 with the predetermined color point.

The primary optic 208 may be on or over one or more layers of the LEDdevice 200 and allow light to pass from the active layer 204 and/or thewavelength converting layer 206 through the primary optic 208. Theprimary optic 208 may be a lens or encapsulate configured to protect theone or more layers and to, at least in part, shape the output of the LEDdevice 200. Primary optic 208 may include transparent and/orsemi-transparent material. In example embodiments, light via the primaryoptic may be emitted based on a Lambertian distribution pattern. It willbe understood that one or more properties of the primary optic 208 maybe modified to produce a light distribution pattern that is differentthan the Lambertian distribution pattern.

FIG. 2B shows a cross-sectional view of a lighting system 220 includingan LED array 210 with pixels 201A, 201B, and 201C, as well as secondaryoptics 212 in an example embodiment. The LED array 210 includes pixels201A, 201B, and 201C each including a respective wavelength convertinglayer 206B active layer 204B and a substrate 202B. The LED array 210 maybe a monolithic LED array manufactured using wafer level processingtechniques, a micro LED with sub-500 micron dimensions, or the like.Pixels 201A, 201B, and 201C, in the LED array 210 may be formed usingarray segmentation, or alternatively using pick and place techniques.

The spaces 203 shown between one or more pixels 201A, 201B, and 201C ofthe LED devices 200B may include an air gap or may be filled by amaterial such as a metal material which may be a contact (e.g.,n-contact).

The secondary optics 212 may include one or both of the lens 209 andwaveguide 207. It will be understood that although secondary optics arediscussed in accordance with the example shown, in example embodiments,the secondary optics 212 may be used to spread the incoming light(diverging optics), or to gather incoming light into a collimated beam(collimating optics). In example embodiments, the waveguide 207 may be aconcentrator and may have any applicable shape to concentrate light suchas a parabolic shape, cone shape, beveled shape, or the like. Thewaveguide 207 may be coated with a dielectric material, a metallizationlayer, or the like used to reflect or redirect incident light. Inalternative embodiments, a lighting system may not include one or moreof the following: the wavelength converting layer 206B, the primaryoptics 208B, the waveguide 207 and the lens 209.

Lens 209 may be formed form any applicable transparent material such as,but not limited to SiC, aluminum oxide, diamond, or the like or acombination thereof. Lens 209 may be used to modify the a beam of lightinput into the lens 209 such that an output beam from the lens 209 willefficiently meet a desired photometric specification. Additionally, lens209 may serve one or more aesthetic purpose, such as by determining alit and/or unlit appearance of the p 201A, 201B and/or 201C of the LEDarray 210.

FIG. 3 is a top view of an electronics board 310 for an integrated LEDlighting system according to one embodiment. In alternative embodiments,two or more electronics boards may be used for the LED lighting system.For example, the LED array may be on a separate electronics board, orthe sensor module may be on a separate electronics board. In theillustrated example, the electronics board 310 includes a power module312, a sensor module 314, a connectivity and control module 316 and anLED attach region 318 reserved for attachment of an LED array to asubstrate 320.

The substrate 320 may be any board capable of mechanically supporting,and providing electrical coupling to, electrical components, electroniccomponents and/or electronic modules using conductive connecters, suchas tracks, traces, pads, vias, and/or wires. The power module 312 mayinclude electrical and/or electronic elements. In an example embodiment,the power module 312 includes an AC/DC conversion circuit, a DC/DCconversion circuit, a dimming circuit, and an LED driver circuit.

The sensor module 314 may include sensors needed for an application inwhich the LED array is to be implemented.

The connectivity and control module 316 may include the systemmicrocontroller and any type of wired or wireless module configured toreceive a control input from an external device.

The term module, as used herein, may refer to electrical and/orelectronic components disposed on individual circuit boards that may besoldered to one or more electronics boards 310. The term module may,however, also refer to electrical and/or electronic components thatprovide similar functionality, but which may be individually soldered toone or more circuit boards in a same region or in different regions.

FIG. 4A is a top view of the electronics board 310 with an LED array 410attached to the substrate 320 at the LED device attach region 318 in oneembodiment. The electronics board 310 together with the LED array 410represents an LED system 400A. Additionally, the power module 312receives a voltage input at Vin 497 and control signals from theconnectivity and control module 316 over traces 418B, and provides drivesignals to the LED array 410 over traces 418A. The LED array 410 isturned on and off via the drive signals from the power module 312. Inthe embodiment shown in FIG. 4A, the connectivity and control module 316receives sensor signals from the sensor module 314 over trace 4180.

FIG. 4B illustrates one embodiment of a two channel integrated LEDlighting system with electronic components mounted on two surfaces of acircuit board 499. As shown in FIG. 4B, an LED lighting system 400Bincludes a first surface 445A having inputs to receive dimmer signalsand AC power signals and an AC/DC converter circuit 412 mounted on it.The LED system 400B includes a second surface 445B with the dimmerinterface circuit 415, DC-DC converter circuits 440A and 440B, aconnectivity and control module 416 (a wireless module in this example)having a microcontroller 472, and an LED array 410 mounted on it. TheLED array 410 is driven by two independent channels 411A and 411B. Inalternative embodiments, a single channel may be used to provide thedrive signals to an LED array, or any number of multiple channels may beused to provide the drive signals to an LED array.

The LED array 410 may include two groups of LED devices. In an exampleembodiment, the LED devices of group A are electrically coupled to afirst channel 411A and the LED devices of group B are electricallycoupled to a second channel 411B. Each of the two DC-DC converters 440Aand 440B may provide a respective drive current via single channels 411Aand 411B, respectively, for driving a respective group of LEDs A and Bin the LED array 410. The LEDs in one of the groups of LEDs may beconfigured to emit light having a different color point than the LEDs inthe second group of LEDs. Control of the composite color point of lightemitted by the LED array 410 may be tuned within a range by controllingthe current and/or duty cycle applied by the individual DC/DC convertercircuits 440A and 440B via a single channel 411A and 411B, respectively.Although the embodiment shown in FIG. 4B does not include a sensormodule (as described in FIG. 3 and FIG. 4A), an alternative embodimentmay include a sensor module.

The illustrated LED lighting system 400B is an integrated system inwhich the LED array 410 and the circuitry for operating the LED array410 are provided on a single electronics board. Connections betweenmodules on the same surface of the circuit board 499 may be electricallycoupled for exchanging, for example, voltages, currents, and controlsignals between modules, by surface or sub-surface interconnections,such as traces 431, 432, 433, 434 and 435 or metallizations (not shown).Connections between modules on opposite surfaces of the circuit board499 may be electrically coupled by through board interconnections, suchas vias and metallizations (not shown).

According to embodiments, LED systems may be provided where an LED arrayis on a separate electronics board from the driver and controlcircuitry. According to other embodiments, a LED system may have the LEDarray together with some of the electronics on an electronics boardseparate from the driver circuit. For example, an LED system may includea power conversion module and an LED module located on a separateelectronics board than the LED arrays.

According to embodiments, an LED system may include a multi-channel LEDdriver circuit. For example, an LED module may include embedded LEDcalibration and setting data and, for example, three groups of LEDs. Oneof ordinary skill in the art will recognize that any number of groups ofLEDs may be used consistent with one or more applications. IndividualLEDs within each group may be arranged in series or in parallel and thelight having different color points may be provided. For example, warmwhite light may be provided by a first group of LEDs, a cool white lightmay be provided by a second group of LEDs, and a neutral white light maybe provided by a third group.

FIG. 5 shows an example system 550 which includes an applicationplatform 560, LED systems 552 and 556, and secondary optics 554 and 558.The LED System 552 produces light beams 561 shown between arrows 561 aand 561 b. The LED System 556 may produce light beams 562 between arrows562 a and 562 b. In the embodiment shown in FIG. 5 , the light emittedfrom LED system 552 passes through secondary optics 554, and the lightemitted from the LED System 556 passes through secondary optics 558. Inalternative embodiments, the light beams 561 and 562 do not pass throughany secondary optics. The secondary optics may be or may include one ormore light guides. The one or more light guides may be edge lit or mayhave an interior opening that defines an interior edge of the lightguide. LED systems 552 and/or 556 may be inserted in the interioropenings of the one or more light guides such that they inject lightinto the interior edge (interior opening light guide) or exterior edge(edge lit light guide) of the one or more light guides. LEDs in LEDsystems 552 and/or 556 may be arranged around the circumference of abase that is part of the light guide. According to an implementation,the base may be thermally conductive. According to an implementation,the base may be coupled to a heat-dissipating element that is disposedover the light guide. The heat-dissipating element may be arranged toreceive heat generated by the LEDs via the thermally conductive base anddissipate the received heat. The one or more light guides may allowlight emitted by LED systems 552 and 556 to be shaped in a desiredmanner such as, for example, with a gradient, a chamfered distribution,a narrow distribution, a wide distribution, an angular distribution, orthe like.

In example embodiments, the system 550 may be a mobile phone of a cameraflash system, indoor residential or commercial lighting, outdoor lightsuch as street lighting, an automobile, a medical device, augmentedreality (AR)/virtual reality (VR) devices, and robotic devices. Theintegrated LED lighting system shown in FIG. 3 , LED System 400A shownin FIG. 4A, illustrate LED systems 552 and 556 in example embodiments.

In example embodiments, the system 550 may be a mobile phone of a cameraflash system, indoor residential or commercial lighting, outdoor lightsuch as street lighting, an automobile, a medical device, AR/VR devices,and robotic devices. The LED System 400A shown in FIG. 4A and LED System400B shown in FIG. 4B illustrate LED systems 552 and 556 in exampleembodiments.

The application platform 560 may provide power to the LED systems 552and/or 556 via a power bus via line 565 or other applicable input, asdiscussed herein. Further, application platform 560 may provide inputsignals via line 565 for the operation of the LED system 552 and LEDsystem 556, which input may be based on a user input/preference, asensed reading, a pre-programmed or autonomously determined output, orthe like. One or more sensors may be internal or external to the housingof the application platform 560.

In various embodiments, application platform 560 sensors and/or LEDsystem 552 and/or 556 sensors may collect data such as visual data(e.g., LIDAR data, IR data, data collected via a camera, etc.), audiodata, distance based data, movement data, environmental data, or thelike or a combination thereof. The data may be related a physical itemor entity such as an object, an individual, a vehicle, etc. For example,sensing equipment may collect object proximity data for an ADAS/AV basedapplication, which may prioritize the detection and subsequent actionbased on the detection of a physical item or entity. The data may becollected based on emitting an optical signal by, for example, LEDsystem 552 and/or 556, such as an IR signal and collecting data based onthe emitted optical signal. The data may be collected by a differentcomponent than the component that emits the optical signal for the datacollection. Continuing the example, sensing equipment may be located onan automobile and may emit a beam using a VCSEL. The one or more sensorsmay sense a response to the emitted beam or any other applicable input.

In example embodiment, application platform 560 may represent anautomobile and LED system 552 and LED system 556 may representautomobile headlights. In various embodiments, the system 550 mayrepresent an automobile with steerable light beams where LEDs may beselectively activated to provide steerable light. For example, an arrayof LEDs may be used to define or project a shape or pattern orilluminate only selected sections of a roadway. In an exampleembodiment, Infrared cameras or detector pixels within LED systems 552and/or 556 may be sensors that identify portions of a scene (roadway,pedestrian crossing, etc.) that require illumination.

Having described the embodiments in detail, those skilled in the artwill appreciate that, given the present description, modifications maybe made to the embodiments described herein without departing from thespirit of the inventive concept. Therefore, it is not intended that thescope of the invention be limited to the specific embodimentsillustrated and described.

The invention claimed is:
 1. A wavelength converting layer comprising: a porous support structure including a stack of multiple discrete quartz or glass mesh layers bonded together, all fibers or strings of each mesh layer being confined to only that layer; and a cured mixture including wavelength converting particles and a binder, the cured mixture filling the porous support structure within and between the multiple mesh layers and bonding together the stack of multiple mesh layers.
 2. The wavelength converting layer of claim 1, wherein the binder includes a silicone.
 3. The wavelength converting layer of claim 1, wherein the binder includes one or more fillers configured to increase a refractive index.
 4. The wavelength converting layer of claim 1, wherein the wavelength converting particles include phosphor particles or pre-formed ceramic phosphor.
 5. The wavelength converting layer of claim 1, the stack of multiple mesh layers being bonded together by being at least partially fused together.
 6. The wavelength converting layer of claim 1, wherein the stack of multiple mesh layers includes one or more layers of woven support material.
 7. The wavelength converting layer of claim 6, wherein a first woven support material includes the fibers or strings that extend across substantially 100% of a transverse dimension of the stack of multiple mesh layers.
 8. A light emitting device comprising: a wavelength converting layer, and a semiconductor active layer, the wavelength converting layer comprising a porous support structure including (i) a stack of multiple discrete quartz or glass mesh layers bonded together, all fibers or strings of each mesh layer being confined to only that layer, and (ii) a cured mixture including wavelength converting particles and a binder, the cured mixture filling the porous support structure within and between the multiple mesh layers and bonding together the stack of multiple mesh layers, the wavelength converting layer being positioned and arranged to absorb first light emitted from the active layer at a first wavelength, and to emit second light at a second wavelength different from the first wavelength.
 9. The light emitting device of claim 8, wherein the binder includes a silicone.
 10. The light emitting device of claim 8, wherein the binder includes one or more fillers configured to increase a refractive index.
 11. The light emitting device of claim 8, wherein the wavelength converting particles include phosphor particles or pre-formed ceramic phosphor.
 12. The light emitting device of claim 8, the stack of multiple mesh layers being bonded together by being at least partially fused together.
 13. The light emitting device of claim 8, wherein the stack of multiple mesh layers includes one or more layers of woven support material.
 14. The light emitting device of claim 13, wherein a first woven support material includes the fibers or strings that extend across substantially 100% of a transverse dimension of the stack of multiple mesh layers.
 15. A method comprising: filling a porous support structure with a mixture that includes wavelength converting particles and an uncured binder, the porous support structure including a stack of multiple discrete quartz or glass mesh layers, all fibers or strings of each mesh layer being confined to only that layer, the mixture filling the porous support structure within and between the stacked mesh layers, and curing the mixture filling the porous support structure so as to bond together the stack of multiple mesh layers and form a wavelength converting layer.
 16. The method of claim 15 wherein the binder includes a silicone, or the wavelength converting particles include phosphor particles or pre-formed ceramic phosphor.
 17. The method of claim 15 wherein the stack of multiple mesh layers includes one or more layers of woven support material.
 18. The method of claim 15 further comprising: partially curing the mixture, positioning multiple semiconductor light emitting devices against corresponding portions of the porous support structure filled with the partially cured mixture, and attaching the light emitting devices to the corresponding portions of the wavelength converting layer by completing curing of the mixture, each portion of the wavelength converting layer being positioned and arranged to absorb first light emitted by an active layer of the corresponding attached light emitting device at a first wavelength, and to emit second light at a second wavelength different from the first wavelength.
 19. The method of claim 18 further comprising: before positioning the light emitting devices, singulating the porous support structure filled with the partially cured mixture, and positioning each light emitting device against a corresponding singulated portion of the porous support structure filled with the partially cured mixture.
 20. The method of claim 18 further comprising, after completing curing of the mixture, singulating the wavelength converting layer so that each light emitting device is attached to a corresponding singulated portion of the wavelength converting layer. 